学科带头人
姓 名: 汪韬 性 别:
学科类别: 物理电子学 电 话: 029-88887658
所属部门: 条纹相机工程中心
通讯地址: 西安市高新区新型工业园信息大道17号
邮政编码: 710119 电子邮件: wangtao@opt.ac.cn

简历:

  工作经历

  2015/6 - 至今,中国科学院西安光学精密机械研究所,条纹相机工程中心,研究员

  2003/6 - 2015/6,中国科学院西安光学精密机械研究所,副研究员

  教育背景

  1999/9 - 2003/3,中国科学院,物理电子,博士,

  1996/9 - 1999/7,西北大学,物理,硕士,

  1992/9 - 1996/7,西北大学,物理,学士,

  研究方向

  方向一:超快光电材料与器件;

  发表文章

  1.Liang L, Tian J, Wang T, et al. Ultrafast optical beam deflection in a pump probe configuration[J]. Chinese Physics B, 2016, 25(9):090602.

  2.Liang L, Tian J, Wang T, et al. Depth profiling of the refractive index from probe beam deflections induced by a serrated pump illumination on GaAs[J]. 2016:1-8.

  3.Liang L, Tian J, Wang T, et al. Measurement of excited layer thickness in highly photo-excited GaAs[C]// International Symposium on Optoelectronic Technology and Application. International Society for Optics and Photonics, 2016:101551Q.

  4.Growth of short-period InAs/GaSb superlattices for infrared sensing.Wang, T; Yang, J ; Yin, F; Wang, JW; Hu, YN; Zhang, LC; Yin, JZ . JOURNAL OF INFRARED AND MILLIMETER WAVES Volume: 30 Issue: 6 511. 2011

  5.InAs/GaSb type-II superlattice grown by MOCVD for long-wavelength infrared detection,LIWEI XIN, TAO WANG, JIN YANG, JINGWEI WANG, FEI YIN, YANAN HU, GUOHUA JIAO LICHEN ZHANG, JINGZHI YIN, ZHENYU SONG, OPTOELECTRONICS AND ADVANCED MATERIALS – RAPID COMMUNICATIONS Vol. 5, No. 9, September 2011, p. 1017 – 1020

  6.InAs/GaSb superlattices growth by LP-MOCVD for 10um wavelength infrared range.Yuchun Chang, TaoWang, FeiYin,Jingwei Wang, Zhenyu Song, Yiding Wang, Jingzhi Yin , Infrared Physics & Technology 54 (2011)478-481

  7.Growth and characterization of InAsSb alloys by metalorganic chemical vapour deposition;Yan Jun-Feng, Wang Tao, Wang Jing-Wei,Zhang Zhi-Yong, and Zhao Wu; Vol 18 No 1, January 2009 1674-1056/2009/18(01)/0320-04 Chinese Physics B

研究领域:

  超快光电材料与器件